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Recently integrated magnetic/spintronic device microarrays have demonstrated great potentials in both biomedical research and practices. In this work, we discuss the physical mechanisms of three types of spintronic devices for magnetic signal sensing, including giant magnetoresistance (GMR) spin valve sensors, tunnel magnetoresistance (TMR) sensors and our newly proposed spintronic memristor sensors...
A nondestructive self-reference read scheme (NSRS) was recently proposed to overcome the bit-to-bit variation in Spin-Transfer Torque Random Access Memory (STT-RAM). In this work, we introduced three magnetic- and circuit-level techniques, including 1) R-I curve skewing, 2) yield-driven sensing current selection, and 3) ratio matching to improve the sense margin and robustness of NSRS. The measurements...
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of...
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