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This work systematically explores the relationship between the resistive switching properties of Pr0.7Ca0.3MnO3 (PCMO) thin film element and its geometry dimensions in deep submicron (DSM) technologies. A series of PCMO-based resistive switch devices (RSDs) with different geometry sizes were fabricated. Our E-test results show that by reducing the PCMO layer thickness from the normal value of about...
We have investigated spin transfer torque random access memory (STT-RAM) with a thermal-assist programming scheme using finite-element thermal simulation. We conducted the study on a specific memory element design to analyze the thermal dynamics and thermal programming mechanism. We paid particular attention to the scalability and design potential of the thermal-assist programming scheme by varying...
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying...
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