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Ru thin films were grown on polymorphic TiO 2 thin film substrates at 230 and 250°C by atomic layer deposition using 2,4-(dimethylpentadienyl)(ethylcyclopentadienyl)Ru and an O 2 gas. While the Ru films grown on amorphous and rutile TiO 2 substrates showed a relatively long incubation cycle number of approximately 350 and 100 at 230 and 250°C, respectively, the Ru films grown...
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