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A new bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex was synthesized for plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) film. Using the synthesized Ta compound, PEALD of TaN was conducted at growth temperatures of 150–250°C in combination with NH3 plasma. The TaN PEALD showed a saturated growth rate of 0.062nm/cycle and a high film density...
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