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Indium oxide (In2O3) thin films were deposited by atomic layer deposition using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)) and H2O as the In-precursor and reactant, respectively. The In2O3 films exhibited a saturated growth rate of 0.083nm/cycle at a deposition temperature of 300°C. Porous and amorphous films were grown at 150°C, whereas dense polycrystalline films were...
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