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The angular dependences of SiO2 etch rates at different bias voltages for in CF4, C2F6, and C4F8 plasmas were investigated using a Faraday cage system. When the bias voltage was −400V, the normalized etch yields (NEYs) reached a maximum at 70° in CF4 and C2F6 plasmas, while they decreased monotonically with ion-incident angle in a C4F8 plasma. This was because the thickness of the steady-state fluorocarbon...
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