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Summary form only given. Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by catalyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide nanowires are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It...
Summary form only given. Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron...
This paper provides a brief overview on recent advances in the exploitation of III-nitride semiconductors for optical communications, such as epitaxial growth of Er-doped III-nitride materials by MOCVD and optical waveguide fabrication. Advantages and challenges of this emerging technology will be discussed
Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2times10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than...
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