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Tin-doped indium oxide (ITO) thin films were deposited by radio-frequency diode sputtering at ambient temperature under a low sputtering voltage (1600 V) and a high chamber pressure (Ar and O 2 , 0.2 torr). Investigations by X-ray diffraction, transmission electron microscopy, atomic force microscopy, and infrared reflectance spectroscopy showed that the ITO films were poorly crystallized,...
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