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Metal-oxide-silicon structures are fabricated by sequential physical vapor deposition of SiOx (x=1.15) and RF sputtering of SiO2 on n-type crystalline silicon. High temperature annealing in an inert gas ambient at 700degC or 1000degC is used to grow amorphous or crystalline silicon nanoparticles in the SiOx layer. The nanoparticle formation is proven by infrared transmission and Raman scattering measurements...
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