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Metal-oxide-silicon structures are fabricated by sequential physical vapor deposition of SiOx (x=1.15) and RF sputtering of SiO2 on n-type crystalline silicon. High temperature annealing in an inert gas ambient at 700degC or 1000degC is used to grow amorphous or crystalline silicon nanoparticles in the SiOx layer. The nanoparticle formation is proven by infrared transmission and Raman scattering measurements...
The paper reports on thermally stimulated conductivity studies used for characterization of the density of states profile in thin film semiconductors, by numerically solving the non-linear time-dependent rate equations for free and trapped charge. We explore the derivation of energy and density scales from temperature and conductivity data. We examine the distinction between ‘strong’ and ‘weak’ re-trapping...
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