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Extremely high carrier mobilities are achieved in layered molybdenum oxide by Sivacarendran Balendhran, Kourosh Kalantar‐zadeh, and co‐workers on page 109. This is achieved by intercalation of the octahedral molybdenum oxide lattice with hydrogen, which tunes the bandgap of the material. Carrier mobilities of 1100 cm2 V−1 s−1 and greater are attained, highlighting the potential of ultrathin molybdenum...
We demonstrate that the energy bandgap of layered, high‐dielectric α‐MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α‐MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V−1 s−1 are obtained.
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