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In this work, we report the state-of-the-art flexible devices based on graphene for radio-frequency transistors and large bandgap MoS2 for low-power digital transistors for flexible nanoelectronics. Our studies on graphene transistors feature record mobility, transit frequency, and tensile strain and the first demonstration of flexible capping layers. Our studies on MoS2 transistors yield the first...
2D channel materials such as semiconducting transition metal dichalcogenides (sTMDs) and graphene are widely understood to be particularly suitable for device studies and realization on flexible substrates with the potential of achieving Si-CMOS type device performance on arbitrary inexpensive substrates. Despite this broad awareness, there have been limited studies so far utilizing these 2D crystals...
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