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h-BN layers were deposited on α-SiC and sapphire substrates by chemical vapor deposition at high temperature (1500–1900°C) using B 2 H 6 and NH 3 diluted in Ar. Growth rates were in the 6–10μm/h range. In all the conditions studied, the as deposited BN layers were found to be translucent to light, some having a light whitish aspect and other a more yellowish one. It was also...
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