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Piezoelectric polarization at the ZnO/PbS‐quantum‐dot (QD) interface can be used to engineer the heterojunction band structure and manipulate the width of the depletion region in the QD layer. This piezotronic modulation enhances charge extraction from the PbS QDs and improves the photovoltaic efficiency of depleted‐heterojunction QD solar cells.
Engineering the electronic band structure using the piezopotential is an important aspect of piezotronics, which describes the coupling between the piezoelectric property and semiconducting behavior and functionalities. The time‐independent band structure change under short‐circuit condition is believed to be due to the remnant piezopotential present at the interface, a result of the finite charge‐screening...
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