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Bi2O2Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se‐based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high‐quality large‐area (≈180 µm)...
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