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High pressure deuterium annealing was applied to nano-scale strained CMOS devices and its effect was characterized in terms of charge pumping, hot carrier, NBTI and DNBTI stress, and normalized drain current noise spectral density for the first time. The characteristics of tensile stressed NMOS devices were improved by the annealing. But for PMOS, especially compressive stressed devices showed degraded...
High pressure deuterium annealing was applied to nano-scale CMOS devices which has Plasma Nitride Oxidation (PNO) gate oxide. The annealing effect was characterized in terms of different sizes, charge pumping, hot carrier and NBTI stress, and \/f noise for the first time. The characteristics of NMOS were improved by the annealing. But PMOS has only improved NBTI characteristic. Devices with narrow...
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