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We investigate the self-formation of Si atomic lines and dimer vacancy chains on the β-SiC(100) surface by atom resolved scanning tunneling microscopy (STM). We show that, using a rigorous protocol in surface preparation, it is possible to build very long, very straight and defect-free Si atomic lines. These lines are derived from the dimer rows of the β-SiC(100) 3x2 surface reconstruction by selective...
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