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A high mobility of 109.0 cm2 V−1 s−1 is obtained by thin‐film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a‐IGZO) thin films. This composite TFT reaches an on‐current density of 61.4 μA μm−1 with a 10 μm channel length. Its performance surpasses that of single‐crystalline InGaZnO and is comparable with that of polycrystalline silicon.
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