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In these BaZrO3-based phosphors, more research works concentrated upon Eu-doped BaZrO3, which is a red-orange long-lasting material. In this study, the solid-state reaction method was used to synthesize the (Ba0.9Sr0.1)ZrO3:Eu0.025 (BSZO-Eu) ceramic was synthesized at the temperature range of 1000°C-1400°C for 2 h. We had found that the optimum excitation optical wavelength of the BSZO-Eu powders...
Coalescence overgrowth of pattern-grown GaN nanocolumns on c-plane sapphire substrate with metal organic chemical vapor deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the lateral strain relaxation in columnar geometry. We present further growth optimization and innovative characterization of metal organic chemical vapor deposition...
We report on photoelectrical and optical properties of the GaN layers overgrown on the columnar structure with diameter of columns varying from 250 to 600 nm. Excess carriers were injected to 2‐μm thick overgrown layer by an interference pattern of two picosecond laser beams at 355 nm. Carrier recombination and diffusion was monitored by time‐resolved transient grating technique and provided 3‐4 fold...
We observe the enhancement of photoluminescence excitation through the coupling of an InGaN/GaN quantum well (QW) with surface plasmons which are generated on an Ag nanostructure deposited on the SiN-coated QW epitaxial sample.
Nitride nanostructures and nano-photonics, including an MOCVD prestrained InGaN/GaN quantum well growth technique for orange and white LED fabrication and surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement, are reported.
Phosphor-free all-semiconductor white-light devices are fabricated by coating CdSe/ZnS nano-crystals on blue/green two-wavelength LEDs for converting blue photons into red light. The LEDs are implemented by stacking two different types of InGan/GaN quantum wells.
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