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In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c‐plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and...
We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c‐plane GaN substrates in pulse operation at room temperature. Defect reduction in the In‐rich quantum wells by improving growth conditions of the epitaxial layers is the key parameter to demonstrate laser operation at this wavelength. Carrier lifetime measurements in combination with electroluminescence (EL) data and...
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