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High quality In 0.13 Ga 0.87 N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 Å, and the barrier thickness is 50 Å. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In...
The photoinduced electron transfer rate in hetero Langmuir-Blodgett (LB) films composed of 7,8-dimethyl-10-dodecyl isoalloxazine (flavin) and N-docosylquinolinium tetracyanoquinodimethan (TCNQ) was investigated. Flavin and TCNQ were used as electron donor and acceptor, respectively. The time-resolved fluorescence decay of three different types of flavin/TCNQ hetero LB films such as mixed layer, head...
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