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The first demonstration of high-Al-composition (> 70%) AlGaN high electron mobility transistors (HEMTs) is reported. High electron mobility (~1300 cm2/Vs at room temperature) was achieved in novel high-Al-composition AlGaN 2-D electron gas structures. The threshold voltages (Vth) of Al0.72Ga0.28N/AlN/GaN HEMTs were shifted from -1.0 to -0.13 V by employing different gate metal stacks, Al/Au and...
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