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This paper illustrates the novel approaches to augment the sensing behavior of In2O3 base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity...
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