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Self-limiting deposition of titanium dioxide thin films was accomplished using pulsed plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) at low temperatures (T<200°C) using TiCl 4 and O 2 . TiCl 4 is shown to be inert with molecular oxygen at process conditions, making it a suitable precursor for these processes. The deposition...
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