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In this study, a low-resistant and high-transparent ohmic contact to p-GaN layer using an indium–zinc oxide (IZO)/(oxidized-Ni/Au) contact system was investigated to enhance light extraction of GaN-based light-emitting diodes (LEDs). Improvement in the light output of GaN-based blue LEDs as a function of the IZO film thickness was examined and an optimum thickness of around 300 nm has been found....
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