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We demonstrate effective passivation of a variety of crystalline silicon (c-Si) surfaces by a thin layer of thermal atomic layer deposited (ALD) titanium oxide (TiO2). Surface recombination velocities of 0.8cm/s, 2.5cm/s and 9.8cm/s have been obtained on n-type 10cm, 1Ωcm and p-type 1Ωcm undiffused wafers, respectively. Recombination current densities of 19 fA/cm2 and 780 fA/cm2 have been measured...
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