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Ultra-fine pitch (6μm) interconnects are essential for high-end application-products that demands high speed and high bandwidth inter-chip communication. Achieving Cu-Cu bonding with such a fine pitch is challenging since bond time is too long and bond interface gets easily oxidized. Throughput issue associated with long-bonding time is solved by using 2-step bonding procedure where first step is...
For ultra-fine pitch and high density Cu pillar low temperature bonding (200°C), the surface contact between substrate and Cu pillar array is the key. Therefore, the fabrication quality of copper bump array affects severely the bonding results. The qualitative factors include (1) Cu pillar array height uniformity, (2) free of copper oxide layer, (3) Cu material property (e.g. elastic modulus, grain...
Low-temperature bonds are thin intermetallic (IMC) bonds that are formed between devices when plated layers of different metals on each side of the component come into contact under relatively low temperature and high pressure. These joints, comprised of completely of IMC compounds, will fail in a sudden unexpected manner as compared to normal solder joints, which fail in a ductile manner, where cracks...
Low temperature bonds are thin intermetallic bonds that are formed between devices when plated layers of different metals on each side of the component come into contact under relatively low temperature and high pressure. These joints comprised completely of intermetallic compounds, will fail in a sudden unexpected manner, compared to normal solder joints which fail in a ductile manner where cracks...
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