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Co-implantation of Al (2x10 18 cm -3 ) and C (1x10 18 cm -3 ), Al/C, into 6H-SiC and subsequent annealing up to 1650 o C were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of vacancy-type defects produced by Al/C-implantation is found to be close to the size of divacancy...
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