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Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH 3 ), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH 3 and TMA on a...
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