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The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology. Multifinger HBTs particularly applicable to power applications are modeled. For modeling the critical self-heating effect a distributed thermal network is applied, yielding only...
This paper presents a status of the HICUM model development activities (within the DOTFIVE project) for future technologies. Physics based scalable model libraries are realized for two of the most advanced SiGe:C HBT processes currently available. The parameter extraction methodology is described via two meaningful examples. Measurement and simulation comparisons are shown.
A procedure for rapid TCAD based evaluation of device design alternatives is presented. It employs 1D device simulation in combination with a physics-based compact model and a corresponding model generator. This enables to provide libraries with geometry scalable models for mm-wave circuit optimization. Based on an experimentally calibrated baseline the procedure is applied to demonstrate the feasibility...
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