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Warstwy tlenku cynku domieszkowanego atomami glinu ZnO:Al były wzrastane metodą osadzania warstw atomowych (ALD, z ang. A-atomic, L-layer, D-deposition). Na szklanych podłożach osadzono warstwy ZnO:Al (tzw. warstwa AZO) o grubości 200 nm. Temperatura osadzania warstwy AZO była równa 160 oC. Najlepsze parametry elektryczne oraz krystalograficzne otrzymano używając dwóch wysoko reaktywnych prekursorów...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.