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We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. The backward diode between the base contact and the base layer...
An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.
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