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The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance–voltage (C–V) and memory window measurements and by simulation. Both the width of hysteresis of C–V characteristics and the injected charge exhibited exponential dependence on the charging voltage at moderate voltage values, while at high...
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