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Photoluminescence and capacitance spectroscopy study of double acceptor levels at 77 meV and 200 meV above the valence band, attributed to gallium antisite has shown that dominant defects giving rise to the levels in n-type crystals are different from those in p-type crystals. Both defects are enhanced by Ga-rich growth conditions, however only those formed in n-type GaAs are consistent with a double...
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