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A comprehensive evaluation of high-temperature (up to 200°C) on-state, blocking voltage and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip integrated Schottky rectifiers is presented in this paper. The SJTs feature current gains of 69 and on-resistance of 6.3 mΩ-cm2 at room-temperature. The integrated free-wheeling Schottky rectifier displays a 0.9 V knee voltage...
Fast-neutron detectors based on high-purity semi-insulating 4H silicon carbide (SiC) semiconductor have been fabricated and tested. The response characteristics of these detectors have been compared with those of epitaxial 4H-SiC Schottky diode detectors. The charge collection efficiency has been tested using alpha particles and the fast-neutron response has been tested with 14-MeV and 2.5-MeV neutrons...
Evolutionary improvements in silicon (Si) power devices through better device designs, processing techniques, and material quality have led to great advancements in power systems in the last four decades. However, many commercial power devices are now approaching the theoretical performance limits offered by the Si material in terms of the capability to block high voltage, provide low on-state voltage...
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