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Papers have been printed without editing as received from the authors. Copyright and Reprint Permission: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of US copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through...
On behalf of the ISPSD conference committee, it is with great honor and pleasure that I welcome you to the 24th International Symposium on Power Semiconductor Devices and ICs (ISPSD'12). ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices, power integrated circuits, their hybrid technologies, and applications. This symposium brings together both industry...
Power electronic interfaces are vital to advanced, smarter, distributed grids and micro-grids and the capabilities and limitations of power devices are integral to this. This paper discusses existing and emerging applications of grid connected electronic interfaces that are enabled by Power Semiconductor Devices. The application focus will be on: (1) inverters, which are a key element of modern distributed...
It is confirmed that more electric society is right direction toward sustainable growth achievement. Electronics including power electronics which enables efficient energy usage is important key technology for the society. Nega-watt cost concept, as an index of development, is proposed to promote efficiency improvement and prevalence of the next generation power electronics (PEs). Improvement of power...
Power electronic semiconductors from the viewpoint of an automotive OEM. Improving efficiency, especially in the “hidden” utilization of power electronic semiconductors, defines the next level of automotive electrification. AUDI breaks new ground in the semiconductor industry by strongly influencing the future of power electronics. Next to new products and functions, new forms of collaboration, networks...
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat)-Eoff trade off. Furthermore, it can be adapted to...
In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The “p-ring” and the “point-injection” type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or...
In this paper, the phenomena of current crowding and impact ionization in edge termination of High-Voltage (HV) LPT(II)-CSTBT™(III) is investigated. It is discovered for the first time that these two phenomena act as separated heat sources and induce one local hot spot which causes the thermal destruction in the edge termination during large current and high voltage turn-off switching. A novel edge...
In this paper, a new type of reverse conducting IGCT referred to as Bi-mode Gate Commutated Thyristor (BGCT) is discussed. The concept of the BGCT follows an interdigitated integration approach of an IGCT and Diode into a single structure while utilizing the same silicon volume in both GCT and Diode modes. This results in improved thermal behavior and current capability. The BGCT design concept differs...
A new tri-gate normally-off GaN metal-insulator-semiconductor field effect transistor (MISFET) is presented in this paper. By using a three-dimensional gate structure with combination of a sub-micron gate recess, the new device achieves a very low off-state drain leakage current of 0.6 µA/mm at a breakdown voltage of 565 V while maintains a low on-resistance of 2.1 mΩ·cm2. The new device has an on/off...
Innovative 800V/300°C AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible technology are presented in this paper. High performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated HEMT (i-HEMT) were fabricated using 5nm-thick HfO2, and 30nm-thick CVD Si3N4 as the gate and passivation insulator, respectively. Contact resistance maps yield reduced...
A p-GaN/AlGaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate. Our p-GaN based device shows not only a high threshold voltage of 3 V but also low gate leakage current. Buffer and device breakdown voltages exceed 1600 V with 5.2 um GaN buffer thickness and specific on-state resistance is 2.9mΩ cm2. The calculated figure of merit is 921 MV2/Ωcm2, which is the highest value...
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional...
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