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The following topics are dealt with: power amplifiers; microwave circuit technology; power combining technology; medical applications; packaging; communication; radar; sensors; and filters.
The dielectric relaxation studies of a liquid and liquid mixture provides valuable information about intermolecular interaction along with dynamics at molecular levels. In Nitrobenzene (NB) and Chlorobenzene (CB) molecules the charge distribution is shielded and H-bonds do not appear and where as in 2-Methoxyethanol (2-ME) molecules the charge distribution is exposed. In pure Nitrobenzene and Chlorobenzene...
A novel and simple architecture for improving efficiency, bandwidth and linearity at backed-off RF power is presented. It is accomplished by a distributed amplifier with proper turn on and off of the transistor devices via an RF detector. A MMIC prototype was designed and fabricated using a GaAs HBT process to verify this efficient, linear and broadband PA architecture and it measured 3% EVM and 24–25%...
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present our latest work towards demonstrating THz frequency amplifiers,including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors...
In this paper, for the first time, a reflection type K-band oscillator, on low-cost Liquid Crystal Polymer (LCP), organic substrate, is presented. The oscillation frequency is determined by a lambda/2 microstrip resonator coupled to a microstrip line. The measured phase noise and power output of the oscillator are found to be −108 dBc/Hz at 1 MHz offset and −6 dBm respectively, for an oscillating...
This paper presents a complete 8-element X/Ku-band phased array based on a single silicon chip. The phased array is integrated together with the antennas and digital control circuitry on a single Teflon board. The chip-on-board package, together with 8 X/Ku-band RF inputs and one RF output in a 2.2×2.5mm2 area, and the appropriate grounding and Vcc connections, are modeled using a 3-D EM solver. The...
In this paper, a single pole single zero asymmetric notch filter using RF micro electromechanical tunable capacitors is presented. The high Q value of the tunable capacitors enables this filter to achieve 25.5dB rejection with less than 1.2dB insertion loss over a 5MHz signal bandwidth. This tunable filter is designed to suppress transmission leakage in the IMT Band I (1.92–1.98GHz) band for handset...
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated...
A sub-resonant mm-wave clock distribution network is presented. The proposed solution introduces near zero skew while consumes significantly less power than alternative approaches such as mesh networks. The clock distribution network was implemented using the TSMC 40nm LP CMOS process and measured using a 4-port vector network analyzer. It measures sub-psec skew from 36.6 to 40.2GHz with less than...
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon's B7HF200 SiGe:C technology. The topology uses diode-connected...
In this paper, a quad-band inverse class-F power amplifier using the novel composite right/left-handed (CRLH) transmission lines (TLs) is developing covering 700 MHz, 800 MHz, 1800 MHz, and 2140 MHz. The novel CRLH TL metamaterials with two left-handed (LH) (backward) and two right-handed (RH) (forward) pass bands are used for quad-band operation. The second- and third-harmonics for four bands are...
A wafer-scale microwave system and circuit integration method has been developed that allows the embedding of multiple semiconductor dice having varied function and material into a compact chip-scale module. This circuit integration technology includes low loss planar transmission line interconnects and integrated precision thin film resistors, capacitors and inductors; all of these structures are...
A rigorous, systematic, measurement-founded approach is presented that enables the design of highly efficient power amplifiers. The identified process allows the designer to quickly identify the parameters necessary for completion of a design whilst ascertaining their flexibility and impact on performance degradation. The investigation continues to consider the impact of the higher harmonics and gate...
Revolutionary THz transmitter and receiver demonstrations are the ongoing focus of a portfolio of programs within the DARPA. Through the sponsorship of the Terahertz Electronics and related programs, a technology base is being established to effectively generate, detect, process, and radiate sub-MMW frequencies to exploit this practically inaccessible frequency domain for imaging, radar, spectroscopy,...
This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by adding a current buffer stage, the effect of one of the major drawbacks in this architecture, the impedance variation in every stage, is reduced. To verify the method, a fully binary 6bit 20.5Gsps DAC with 1W power dissipation and measured...
This paper describes the design, simulation and experimental verification of an efficient, 35 dBm, RF power amplifier (PA) module, implemented in gallium arsenide heterojunction bipolar transistor semiconductor technology (GaAs HBT). The PA module, which includes all the power supply decoupling and matching components, occupies an area of only 12 mm2 and achieves outstanding output power flatness...
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
In this work, two topologies for realizing compact microwave diplexers in dual-mode cavities are presented. The first topology is a classical one, where the common port is coupled to two resonators in separate paths. The second topology is original because of the excitation of a single resonator by the common port. The interest of the second topology is demonstrated on dual-mode cavity diplexers by...
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