The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a simple way to grow continuous and single-layer MoS2 film by LPCVD (Low Pressure Chemical Vapor Deposition) in centimeter scale. The as-grown MoS2 films are characterized by optical microscopy (OM), scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The layer number of...
This paper presents a new compact model, JFETIDG, for independent dual-gate JFETs. The model is applicable to JFETs with any combination of p-n junction or MOS gates, captures geometry and temperature dependencies. As a special case, it can model junctionless MOSFETs. The model is verified by comparison to experimental and TCAD data. Verilog-A code for the model is available in the public domain.
CMOS image sensor has been widely used for ubiquitous devices. However, CMOS image sensor devices performance is dramatically influenced by process induced defects such as metallic impurities contamination at devices active region during CMOS devices process. Thus, it is extremely important to study metallic impurities influence on CMOS image sensor devices performance and to develop effectiveness...
The observability of conventional electrical test site and imaging techniques needs to be extended and coupled with all of the actual product layout attributes in order to reflect the relevant yield detractors of the current technologies in production and development. This paper discusses new electrical test site strategies that have been recently developed and deployed developed for parametric yield...
We examine the electrical and physical properties of ALD Al2O3/InxGa1−xAs (x = 0.53, 0.7 and 1) MOS interfaces with (NH4)Sy, BHF and HF pretreatment. It is found that, in higher In content (x), InxGa1−xAs MOS interfaces with BHF and HF cleaning exhibit better C-V characteristics and lower interface state density (Dit) than with (NH4)Sy pretreatment. Also, amounts of arsenic oxides, evaluated from...
Electrical properties of Hf-Zr-O films with several thicknesses are studied. Decent ferroelectric performances are obtained in a wide range of film thickness between 6.8 and 41 nm. A drawback in Hf-Zr-O system is that the operation electric filed for the saturated ferroelectric polarization is close to the breakdown electric field. An investigation of coercive field vs. thickness reveals that HfO2-based...
To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.
Si single crystal stripe on bended glass substrate was fabricated by micro-chevron laser beam scanning method. The single crystal stripe had a dimension of about 6 μm in width and several hundreds of microns in length. The crystal quality was evaluated by EBSD, to reveal that the crystal orientation rotated about the transverse direction in forward direction, and only Σ3 and Σ9 coincidence site lattice...
GeSn alloys are investigated for high-performance tunneling device applications. Samples with relatively high Sn compositions are characterized. GeSn electronic band structures are calculated and basic material parameters are extracted. Based on the established GeSn parameter sets, direct-gap GeSn tunneling field-effect transistors are simulated and analyzed. A higher Sn composition enhances device...
We have investigated the crystalline and electrical characteristics of heavily doped n-type Ge1−xSnx epitaxial layers with various Sb concentrations up to 1020 cm−3. In this study, we focus the thermal stability of Sb doped Ge0.94Sn0.06 and Ge epitaxial layers and clarify the relationship between the crystalline and electrical characteristics. At the as-grown condition, the substitutional Sb concentration...
This paper presents an electroactive polymer (EAP) actuator controlled scissor-type gripper (Fig. 1). The EAP actuator is made of ion polymer metal composite (IPMC). By doping Fe2O3 nanoparticles into IPMC, the actuator exhibits larger force output and 2-fold increase of maximum deformation compared to the pure IPMC actuator. Using water retaining poly(N-isopropylacrylamide) (PNIPAAM) made water supply...
A thin-film micro thermoelectric generator (μTEG) applicable to wearable devices is investigated. This μTEG module has a transverse configuration of the Seebeck elements and thus can adapt to microfabrication process with a thin-film thermoelectric material. A design method to maximize the output of the μTEG is developed, and its performance is analyzed. A high output power of 10mW with an output...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low temperatures. It will pave the way to address...
We investigate low-temperature formation process of sputtered-MoS2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H2S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2–1016 cm−3.
Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM,...
TSV is an important interconnection for advanced packaging. Via-filling by molten alloy is considered as an alternative to electroplating process. In this paper, a micro-casting method for TSV fabrication is proposed and demonstrated. This TSV fabrication method owns advantages of fast-filling and lost-cost.
The CMOS devices with Ge, considered as one of new materials for the later 5-nm generations, has been investigated since Ge should be mandatory material to enhance the electron mobility as replacement for Si. In this paper, we will propose new two techniques for surface preparation and wet cleaning, one of two techniques is in terms of PRE (Particle Removal Efficiency) on Ge surface, and the other...
In this paper, the amplitude of random telegraph noise (RTN) in FinFET is studied, comparing with RTN in planar devices. The impacts of intrinsic characteristics in FinFET (channel non-uniformity and quantum confinement) on its RTN amplitude are comprehensively studied, based on the framework of “hole in the inversion layer” (HIL) model and the 3D device simulations. The results indicate that, the...
A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.