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Organic thin-film transistors (OTFTs) are making significant inroads into various large-area applications. Organic materials provide a low-cost alternative to silicon in the electronics industry as they can be fabricated at low temperatures and with high throughput on a wide range of unconventional substrates, such as glass, plastic, fabric and paper. This paper presents a simple 2D simulation study...
In this work, boric acid powder solution has been used as a dopant source for optimizing emitter sheet resistance values corresponding to temperature range 850°–900°C. High purity (99.999%), non-toxic and low-cost boron diffusion is found to be suitable for p or p+ emitters with minimum diffusion-induced defects. Formation of a boron-rich layer, which is considered as a major problem in B-diffusion...
Surface-Evolver is an interactive program used to study surface profiles that are influenced by surface tension. The tool is an open source software, developed by Professor Kenneth Brakke in Susquehanna University, USA. Solder based self assembled (SBSA) 3D structure was studied previously via experiments using lithography, deposition, wet etching, and dip soldering methods. SBSA 3D structure has...
Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations...
AlGaN/GaN HEMTs were post-gate-annealed at 300°C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (Vboff) was observed with increase in annealing duration. This was correlated with surface/interface...
The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism...
Silver nanoparticles (NP's) were fabricated from silver ultrathin film deposited by e-beam evaporation using an optimized process, followed by rapid thermal annealing (RTP) done at 4000C for 1 minute on mono c-Si solar cells. The optical reflection and the electrical performance of the solar cells with and without silver nanoparticles were studied and analyzed. Incorporating Ag NP's improves the antireflection...
Growth of silicon nanowires by Vapour-Liquid-Solid (VLS) method has been studied in a cold wall Catalytic Chemical Vapour Deposition (Cat-CVD) chamber. It has been found that the instrument can be used in two modes, Hot Wire Chemical Vapour Deposition (HWCVD) and Chemical Vapour Deposition (CVD). These modes are tested with two methods for the preparation of the catalyst nanoparticles, namely thermal...
The presence of electrical traps in AlGaN/GaN HEMT devices can play a major role in determining the power performance of the device. In this work we have carried out measurements to understand the role of traps in these devices. The study has been carried out by comparing the Pulse I-V measurements and S parameter measurements, on the devices with knee walkout and without knee walkout. The changes...
SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher...
In this paper we expounded the optimal electrode material for fullerenes, being explored for the molecular electronics based applications. We scrutinized the largest curvature fullerene, C20 stringed to three different electrode materials viz. Copper, Silver and Gold using semi-empirical approach for this two probe modelling. We perceived that the transport phenomena for copper and silver electrodes...
In this work we have used functionalized polyaniline (PAn) nanowires for fabrication of a biosensing platform which was exploited for fabrication of three different biosensors. In one effort, we have immobilized single-stranded DNA oligonucletide (ssdA) on this platform and have monitored its combination with the complementary strand (ssdT) at a concentration as low as 10−18 M. Moreover we have immobilized...
This paper reports low temperature Cu-Cu thermocompression bonding with the help of self-assembled monolayer (SAM) desorption. SAM layer protects copper from oxidation. It should be desorbed just before bonding. The desorption was carried out using cyclic voltammetry in aqueous potassium hydroxide (KOH) solution. Contact angle measurements carried out before and after desorption indicates successful...
In this paper, we propose a novel p-type dopingless tunnel field effect transistor (DL-p-TFET). The proposed DL-p-TFET device does not use conventional ion implantation or diffusion for realizing source and drain regions; these regions are created by using metals of different work function, a charge plasma concept. It has been observed that by optimizing the source and gate electrode gap (Lgap, S)...
We are reporting the 2DEG mobility and sheet carrier concentration behavior of AlGaN/GaN HEMT stacks that are grown on different kinds of transitions from AlN buffer to epi-GaN. The role of each transition in terms of interfacial roughness and epi-GaN crystallinity are discussed. Further, the observed material parameters are correlated with the HEMT 2DEG property. Enhancement in 2DEG mobility was...
We have studied the effects of geometrical variability on the chiro-optical response of helically arranged metal nanoparticles. A semi-analytical approach based on coupled dipole approximation model was used to study the effects of variation in shape, size, position, spacing and orientation of the metal nanoparticles. Within the extent of geometrical variability studied in our model, we found the...
Solar Photovoltaic (PV) systems are gaining popularity as a form of alternative energy with increased environmental awareness, renewable energy usage and concern for energy security. Lack of area-specific forecasts for the power output of grid-connected photovoltaic system hinders tapping solar power on a large scale. The objective of this paper is to estimate the profile of produced power of a grid-connected...
The present study compares two single-gated field effect transistors (FETs) for cholesterol detection. One is traditional graphene-FET and the other is junctionless carbon nanotube (CNT) FET. Both the FETs have been fabricated using the electrochemical deposition (ECD) technique. Cholesterol response has been recorded in a glass pot containing phosphate buffer saline (PBS) using digital multimeter...
In this paper, a novel back gated AlGaN/GaN High Electron Mobility Transistor (HEMT) structure is proposed for detection of biological molecules such as nucleic acids (DNAs, RNAs). The proposed device consists of a thin film layer of AlGaN on top of a GaN thin film layer grown on a substrate such as sapphire or silicon, wherein the substrate is completely back etched exposing the GaN surface for attachment...
Ultra-thin SiO2 layers were grown on n-type 4H-SiC by thermal oxidation in high pressure water vapor ambient. The gate leakage current mechanism at low electric fields and different temperatures was studied. The presence of direct tunneling (DT) and Schottky emission (SE) current mechanisms was observed, with DT dominating at low temperature region of up to 393 K and a combination of DT and SE present...
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