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To modulate the conductivity of channel as well as for controlling threshold voltage of the device doping is required. Sometimes this doping can be unintentional via adsorption of impurities. We have found by ab-initio density functional theory calculations that K and Nb atoms change the system into n-type, and Br changes into p-type if adsorbed on monolayer of MoS2. Similarly Cl, V and P introduce...
Electronic devices are finding increasing application as biosensors for the label-free detection of biomolecules. These biosensors offer the advantage of fast detection and compatibility with existing CMOS processes that enable rapid commercialization, and achieve very low detection limits. A biosensor's sensitivity is one of the main factors determining its performance. The application of emerging...
This paper presents a controlled lateral etching-based technique for realizing nanogap structures. These structures have applications in different bio-medical/ biochemical sensors. The sensitivity of such sensors depends on the gap size. The method method uses single mask lithography, followed by etching for the first electrode material and lift-off for the second electrode material. Controlled under-etching...
We propose an index tuned silicon photonic sensor capable of measuring refractive indices of liquid analytes. This sensor uses two microring resonators in cascaded configuration. Conventional double microring resonators display high sensitivity but limited range of detection. We show that the range of detection can be enhanced by more than an order of magnitude by using index tuning.
Graphene is considered one of the most promising materials for future electronics as it exhibits high charge carrier mobility. The prerequisite for the development of graphene-based electronics is to dope graphene effectively. In general, graphene-based field effect transistors show unwanted and uncontrolled p-type behavior in the ambient. It is required to dope graphene controllably without affecting...
Silicon-Germanium is used as an alternative channel material for pFET in high-k metal gate-first technologies for 32 nm and beyond. However, gate-induced drain leakage (GIDL) is significant at nominal bias due to band-to-band tunneling (BTBT) at the gate-to-drain overlap surface and gate sidewall junctions. In this work, the results of numerical simulation are compared with experimental results for...
The present work focusses on thin film transistor (TFT) devices with polycrystalline and amorphous Indium-Gallium-Zinc-Oxide (IGZO) thin films fabricated using solution processing. Since it is easier to vary composition through solution processing, we have investigated suitability of various chemical compositions for TFT applications. We have found that a common composition In:Ga:Zn::1:1:1 used in...
Surface plasmon-enhanced near-band-edge (NBE) emission of ZnO nanorods (NRs) array was studied after growing on ultra-thin Ag film of mass thickness 1 nm. Prior to the growth, Ag films were annealed at 100 and 250 °C. Annealing at 100 °C lead to the formation of smaller size of Ag nanoparticles with higher particle number density facilitating the vertical growth of higher density of ZnO NRs with high...
This paper investigates the effects of fringing field arising out of high-k (dielectric constant) gate insulator on the device performance of a p-channel double-gate junctionless transistor (p-DGJLT). The overall device performance of a p-DGJLT is degraded with such fringing field. This behavior is similar to its n-channel counterpart of similar dimension. The effects of spacers on both sides of high-k...
We investigated the effect of Ga flux and plasma power on the homoepitaxial growth of GaN epitaxial films by Molecular Beam Epitaxy (MBE) on MOCVD-grown GaN templates on c-sapphire substrates. The grown GaN films were characterized by several techniques to assess their structural and morphological properties. The surface morphology, dislocation densities and crystalline quality were found to be contingent...
In this work, we report the dependence of optimum value of field plate parameters, viz., overlap length and dielectric thickness, on dielectric constant of field-plate dielectric in a 1900V, Ni/4H-SiC Schottky diode. Field plate overlap length and dielectric thickness are optimized for different device processing-compatible dielectric materials: SiO2, Si3N4, Al2O3 and HfO2. The results show that the...
In this paper, we report optical and mechanical properties of low temperature plasma enhanced chemical vapor-deposited (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) thin films. Initial screening of this process using hydrogen-dilution was performed with a two-level, three-parameter design of experiments (DOE) with eight samples. In this process regime, it was determined that the main parameters...
In this article, we propose the formation of GaN nanowall morphology on Si (111) surface by varying nitrogen flux from 2, 4.5 and 6sccm in PA-MBE growth. The optical, structural and electrical properties of these films are investigated. Cathodo-luminescence data suggests that the nanowall network grown at 6sccm show high optical emission and high crystalline quality. The current-voltage (I-V) characteristics...
In this paper, we address a simplified physics-based analytical model for the temperature — as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity of...
Superhydrophobic surfaces show extraordinary water-repellent properties with low drag for fluid flow due to reduced liquid-solid contact area. Due to high contact angle and low contact angle hysteresis these surfaces also show self-cleaning effect. In nature different plants and leaves, such as Lotus leaf and Rose petals show superhydrophobic behaviour due to wax coated micro/nano hierarchical structures...
High thermal stability is a requirement for thin films explored for solar cell applications. In this paper the thermal stability of single layer AlOX film deposited by pulsed — DC (p-DC) reactive sputter technique and a stack of AlOX/SiNX for surface passivation of p — type crystalline silicon (c-Si) is compared. The SiNX film of thickness of 70 nm, was deposited using inductively coupled plasma (ICP)...
The effect of size on the scattering properties of silica nanoparticles on glass has been presented here. Silica nanoparticles of two different sizes (∼50 nm and ∼300 nm diameter) have been synthesized by a modified Stober technique and applied by spin coating on glass surface. Scattering properties of the nanoparticles have been studied experimentally. It is seen that larger nanoparticles have a...
Bimorph cantilever-based thermal actuators are promising for numerous applications like micro-mirror arrays, etc. This paper presents a simple technique for fabricating bimorph cantilevers using a single photolithography process and a quick optical methodology for the characterization of such structures. A bimorph combination of Al-SiO2 has been realized where SiO2 cantilevers are first realized,...
This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material...
Charge carrier mobility is a critical parameter in organic field effect transistors and it is strongly influenced by morphology and structure of the involved organic materials. In this work, we present a study on impact of grain size and surface roughness of the active layer on the mobility in top gate n-type C60 organic field effect transistors. The morphology was varied by changing the substrate...
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