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This paper discusses a detailed approach to the optimization of laser-fired contacts for the rear surface-passivated p-type crystalline silicon solar cell. To obtain a proper ohmic contact, there are various parameters which should be taken into account while making LFCs, such as pitch, pulse length (or duty cycle ratio), laser output power and number of pulses. Optimization methodology for forming...
In this paper, we report the potential of the doping-less (DL) double gate field effect transistor (DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated that the proposed DL-DGFET do not require any doping from source to drain region and it can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-mode (IM) DGFETs. The DL-DGFET achieves...
Anodized titania, synthesized on oxidized silicon substrate, has been used as oxygen gas sensor. The as-anodized films resulted in a sensitivity of 5756% at 125°C, when exposed to 100% oxygen. The gas-sensing performance of anodized films has been evaluated with post-anodization treatment in de-ionized water and aqueous ammonia solution. The sensitivity increases to 8646% and 16599%, with post-treatment...
In the current paper, a systematic study is presented of step-by-step process-induced stress variation of a Sapphire/Silicon/high-k MOSFET, for various aspect ratios, W/L. A substantial value of compressive stress of about 1 GPa, suitable for hole mobility enhancement, has been obtained. It is observed that the nature of the induced stress depends heavily on device dimensions. The study has been carried...
Sensing nodes are employed for intelligent ambient monitoring and information dissemination. The primary challenge in making a sensing node autonomous is the ability to power it continuously. The conventional method of powering these nodes through batteries has an associated drawback of periodic maintenance and replacement. Alternate methods of powering sensing nodes are gaining impetus with the advent...
Helical magnetic nanopropellers have been a subject of active research in the last few years. In this work we present the details of the numerical calculation to model their motion in the presence of thermal fluctuations. Also pertaining to their possible use in microfluidic devices, we have included the effect of adjacent walls. The results of our numerical calculations show non-Gaussian features...
Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model...
We report a two-dimensional simulation study of a dopingless TFET with a hetero-gate dielectric. The energy band gap on the source side is modulated using a hetero-gate-dielectric in a dopingless TFET to increase the source-side tunneling rate. The use of a hetero-gate-dielectric, only on the source side, will ensure that the ambipolar current is not enhanced due to the drain-side tunneling. We demonstrate...
A novel theoretical approach is developed for treating energy transfer interactions between a donor and an acceptor molecule in the proximity of a nanoshell. Motivated from the diverse applications and rich plasmonic features of plasmonic nanoshell for example, tuning capability of Surface Plasmon (SP) frequencies, greater sensitivity to the dielectric environment, and controllable redirection of...
A recent trend in biosensors and biomedical devices is the fabrication of compact, high aspect ratio and free-standing biocompatible structures with application as force sensors, microneedle-based drug delivery systems, array of chemical sensors, etc. SU-8 photoresist is a promising candidate to fulfill such structure. Poly(Dimethylsiloxane) has been used as the sacrificial layer to successfully release...
In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO2 interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface...
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I — V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G — V characteristics show significantly different signatures of Gaussian and exponential traps which allow...
In situ Ga-catalyzed AlGaAs nanostructures have been grown by MOVPE. The effect of growth temperature on the shape, size, tapering, and spatial distribution of nanostructures has been investigated using the FESEM technique. Micro-PL measurements have been conducted to analyze the optical quality of the nanostructures. Aluminum composition of around 13% has been estimated by multiple peak-fitting of...
Water droplets actuated by alternating fields mostly show axisymmetric modes. Under certain actuation conditions, non-axisymmetric resonance modes grow at the cost of axisymmetric modes. Using high speed imaging, we studied the growth dynamics of these non-axisymmetric modes of water droplets actuated by AC electrowetting-on-dielectric (EWOD). It was observed that at certain frequencies the non-axisymmetric...
Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ∼ 7561 at ± 2 V, barrier height...
In this paper, we have demonstrated the performance analysis of a planar junctionless (JL) silicon-oxidenitride-oxide-silicon (SONOS) memory cell implemented on the bulk and silicon-on-insulator (SOI) substrate wafer. Both cells are simulated using extensive two dimensional device simulator and compared on the basis of improved memory characteristics. The JL SOI SONOS exhibits larger memory window...
Wire Bonding is a well known method used for interconnecting integrated circuit (IC) die and the leads of its package. In this paper, the effect of current on the temperature of the gold (Au) ribbon used for wire bonding in the packaging of power device is presented. Infrared spectrometer study and direct thin film Pt temperature sensor analysis were used to analyze the temperature variations in gold...
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