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A novel helium-3 ion bombardment technique is proposed for creating locally semi-insulating substrate areas. A helium-3 dose of only 1.5×1013cm−2 increases a Si substrate resistivity from 6Ω-cm to 1.5kΩ-cm, which improves the quality factor of a 2-nH inductor with a 140µm-diameter by 38% (Q=16.3). An aluminum mask is used for covering active areas, and at most 15-µm distance from the mask edge is...
We present a systematic investigation of the impact of aggressive lateral and vertical TiN/Hf(Al)O/Hf/TiN RRAM cells stack scaling down to 10nmx10nm cell size and 5nm thickness on performance and reliability. We demonstrate that median values and 1-sigma dispersion of programming voltages, resistances and disturb are not affected by lateral and vertical scaling in agreement with QPC/hour glass conduction...
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