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We present a new device design for 20V application in thin body SOI technology. High breakdown voltage is achieved by forming RX-bound field plates which deplete the drift region of an LDMOS structure using only lateral electric field coupling. A baseline 180nm CMOS SOI process is utilized and RX field plate shapes are designed to result in an essentially uniform longitudinal drift region electric...
A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable,...
Traditionally, the major driver in IGBT and diode development is to minimize the static and dynamic losses. A significant reduction of the n-base thickness would yield this, however it can also jeopardize the switching characteristic leading to high overshoot voltages during diode reverse recovery. In this paper, we present an improved Field-Charge Extraction (FCE) concept that is achieving a soft...
This paper proposes an IGBT-based full-integrated power module (FIPM) that we have newly developed for compactness, high performance and low cost motor drive applications. It integrates all necessary power and control components to form a motor control system for the inverter air conditioner. Inside the FIPM there are a copper-dielectric-aluminum (CDA) substrate and a printed circuit board (PCB) substrate...
This study comprises the electrical analysis of an experimental investigation on thermo-mechanical vibration measurements on an IGBT inverter structure under operating conditions and shows a new way how to experience reliability relevant phenomena. In order to perform transient temperature measurements with IR thermography and optical vibration measurements one sub-system of the inverter module was...
A two-mask process for 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifiers was studied in this paper. Systematic simulations and process developments were performed and SiC TMBS devices with breakdown voltage (BV) larger than 600V were successfully fabricated. SiC TMBS devices with a mesa width of 2μm to 4μm, a trench depth 2μm and a trench oxide layer of 0.2μm oxide thickness provide good characteristics...
A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore,...
High-voltage AlGaN/GaN HEMTs fabricated on a GaN-on-SOI platform were demonstrated. The GaN-on-SOI wafer features III-nitride epi-layers grown by MOCVD on a modified SOI wafer consisting of a p-type (111) Si device layer, a SiO2 buried oxide and a p-type (100) Si handle substrate. Depletion- and enhancementmode HEMTs are monolithically integrated. The Enhancement-mode HEMTs obtained by fluorine plasma...
In this paper, we present a method of reducing threshold voltage shift for normally-off GaN MIS-HEMT by the optimization of dielectric deposition conditions. High-temperature deposition of Al2O3 insulator decreases the impurities in a dielectric film, leading to small C-V and I-V hysteresis under large positive gate voltage operation. Moreover, Al2O3 deposited at high temperature achieve high quality...
In this paper, a segmented IGBT gate driver IC for mitigating IGBT turn-on IC over-shoot is presented. The proposed IC is fabricated using TSMC's 0.18 μιη BCD Gen-2 process. Unlike existing IC over-shoot reduction techniques, the proposed technique does not require significant additional external components or an increase in turn-on energy. During turn-on, the gate driver is controlled such that (dV...
In this paper, a novel 3D TSV (Through-Silicon-Via) transformer technology for power system-on-chip applications is proposed and demonstrated experimentally. The transformer used in the power system features a galvanic isolation of > 4 kV and a voltage gain of > −3 dB from 10 MHz to 100 MHz. It can be embedded in the bottom layer of a silicon substrate and sandwiched between system circuitries...
The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidation conditions, and wet oxidation improves the trade-off between the threshold voltage and the specific on-resistance. We fabricated 600 V 4H-SiC MOSFETs...
We present an ultimately narrow pitch superjunction UMOSFET (SJ-UMOS) with a record low specific on-resistance (Rsp) for automotive applications. This high performance device was designed by not only shrinkage of lateral p/n pitch, but reduction of longitudinal dimension for voltage sustaining region including ion-implanted p-columns. The refined technologies brought us a fully depleted SJ structure...
Power MOSFETs integrated in modern Smart Power switches feature a substantial high current capability due to the very low value of their transconductance coefficient K. In this paper we demonstrate that the trend related to the increasing current capability implies a reduced thermal stability range which may lead to less robust devices. Electro-thermal simulations of two test chips featuring two different...
For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high...
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