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Optical beam steering through an InP photonic integrated circuit has been improved in term of side-lobe suppression (13dB from −14° to 14° around the peak) and steering angle (10° by 28nm wavelength tuning).
Efficient nonradiative energy transfer is observed from nanopillars of InGaN/GaN quantum wells to colloidal CdSe/ZnS quantum dots up to 83% efficiency. Nanostructured architecture is shown to promote excitonic color conversion for LED applications.
With our recent development of novel frequency combs in the mid infrared and extreme ultraviolet, we have opened the door for sensitive and high-resolution spectroscopy in these spectral regions. I will report these advances.
Dual-comb spectroscopy is extended to the visible range. The dense rovibronic spectrum of iodine around 520 nm is measured within 12 ms at Doppler-limited resolution with a scheme that only uses free-running lasers.
We report broadband third harmonic generation via intermodal phase matching in silica microfibres of several centimetres. A 5 dB conversion bandwidth exceeding 36 nm was recorded, with harmonic power detected over a 150 nm range.
We demonstrate second harmonic generation at 1621 nm in a low-loss orientation-patterned GaAs waveguide pumped by an optical parametric oscillator system. The losses were estimated to be 2.12 dB/cm.
We demonstrate integrated on-chip ring resonators on a single crystal diamond on insulator substrate with wide band operation around 1550nm with quality factors as large as 15000 for TE and TM modes.
We synthesize femtosecond pulses by coherently combining spectra from three fiber chirped pulse amplifiers. Multi-channel spectral synthesis offers a way to overcome gain narrowing limitations in a single fiber amplifier.
Expressions are derived for the low-intensity temporal pedestal produced by optical surface roughness within stretchers and compressors. Phase noise in the near field of a spectrally dispersed beam produces space-time coupling in the focal plane.
We demonstrate large field-of-view (FOV) (30 mm2) fluorescence microscopy with submicron resolution using a refractive microlens array. The large area of the array decreases image acquisition time over FOVs by avoiding long-range mechanical scanning.
We systematically studied the lasing characteristics in photonic polycrystalline and amorphous structures under optical pumping. The lasing modes are spatially localized, and blue shift as the structural order becomes short ranged.
PTB, the metrology institute of Germany, operates the worldwide first and still unique THz detector calibration facility traceable to SI. A project in cooperation with SLT company is dedicated to develop suitable pyroelectric THz detectors.
We experimentally show that continuously changing polarity of an elliptically-polarized terahertz electric-field can be used to image a height profile of semiconductors, metals, and their hybrid samples with a depth resolution of ∼1 μm.
Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (∼ 3%) in the In0.3Ga0.7N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
GaN-based semipolar (2021) laser diodes (λ=505 nm) with a 4 nm wavelength blueshift from spontaneous emission to lasing are demonstrated. The minimal blueshift is attributed to the stable energy profile in the quantum wells.
A 1.3-μm-range metamorphic InGaAs laser with high characteristic temperature (T0 = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser has been achieved by inserting an electron stopper layer in the p-cladding layer.
Using adiabatic tapers, hybrid silicon / III-V lasers and amplifiers are integrated with conventional thin (t = 0.25 μm) silicon waveguides. Amplifiers have ∼12 dB intrachip gain, and similar lasers have thresholds of 35 mA.
Advances in femtosecond lasers and ultrafast optical techniques may lead to the construction of fully coherent soft and hard x-ray sources with unprecedented coherence, peak brightness and temporal control. Key laser technologies enabling this progress are reviewed.
We report operation of AlGaN laser diodes grown on semipolar buffer layers partially relaxed by misfit dislocation formation at heterointerfaces remote from the active region. This approach offers a pathway to mid-UV AlGaN based lasers.
We present record power of 3.7 W from a CW Cr:ZnSe laser pumped directly with a diode laser. Power >1.5 W over the tuning range of 2200–2600 nm is presented. A first-of-kind demonstration of electro-optic tuning is also presented.
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