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We have used a current ramp based method (BEM) to study the electromigration response of metal lines prepared under different experimental conditions. The samples were all A11% Si; BEM discriminated among the metallizations prepared with different sputterirng systems: a better behavior was obtained for films prepared in high vacuum and with a fast deposition rate. Furthermore we have characterizad...
Different conditions of zone melting recrystallization using both laser and a mercury are lamp are studied. N-channel MOSFET's were fabricated in these materials to compare their qualities and to evaluate their device-worthiness. Subgrainboundary-free silicon films are obtained resulting in devices with high surface mobility and low leakage currents.
This paper reports on a Monte Carlo simulation of the hot electron transport phenomenon in an heterostructure semiconductor device. Two different electron populations have been simulated: the hot electrons injected via a tunneling mechanism into the base, and the thermal electrons arising from the high doping density of the ballistic device. Electron-electron scattering and plasmon-electron scattering...
Different types of bipolar transistor emitters are described. Epitaxial emitters can be achieved by solid phase epitaxial regrowth of polysilicon (at T ≫ 850??C) and recently by glow discharge deposition at T = 250??C and recrystallization (at T = 700??C). Wide band gap emitters and narrow bandgap bases result in very high emitter efficiency which has to be traded-off with emitter and base series...
Al (1% Si) electromigration in narrow stripes was studied by means of MFT and resistometric methods. For very narrow stripes no correlation could be found between the variation of resistance and the end of life. A simple model was developed to explain the observed small resistance variation.
Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si3N4 interfaces. Interface states density in the low 1011 cm??2 eV??1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.
Numerical simulations and analytical models derived on lasers and test structures enable to determine the parameters which allow to fit experimental I(V) measurements, to pinpoint the semiconductor interface responsible for the excess current and to determine the evolution of the performances under aging.
The effective recombination velocity (ERV) associated with the polysilicon/monosilicon interface has been measured for different polysilicon structures. Using a new measurement method, the analysis indicates that the behavior of a polysilicon/monosilicon interface, free from any intentional oxide layer and with a polysilicon layer heavily doped, is similar to the one of a single-crystal high-low junction...
A novel technique for the fabrication of asymmetrical incompletely gated transistors is described. The subthreshold characteristics of transistors fabricated using the technique are measured and conclusions concerning the mechanisms responsible for the observations are presented.
It is shown that the current gain increases for reduced emitter sizes of self-aligned bipolar transistors with polysilicon emitter contact. This phenomenon is explained by the difference between the polysilicon contact area and the effective emitter area derived from electrical data.
1.5 μm distributed feedback buried heterostructure lasers have been fabricated by a two step hybrid LPE-MOVPE growth. A threshold current of 38 mA and a single mode DFB operation up to 8 mW in CW have been obtained with a new stripe design.
Si-on-insulator (SOI) technology is essential for space and military applications where immunity to ionizing radiation is required. It will also lead to commercial, high speed CMOS circuits. This paper reviews formation of SOI structures by implantation of high doses of oxygen, followed by heat treatments at 1405??C in a lamp furnace. The result is an SiO2 layer, with atomically abrupt interfaces,...
Propagation effects along the electrodes of single- and multi-gate MESFETs are analyzed by means of new model which directly exploits two-dimensional small-signal simulation. The electromagnetic behaviour is characterized through a quasi-TEM multiconductor line model, and preliminary results are presented concerning the influence of gate width on the overall device performances.
Degradation modes of 1.3 ??m and 1.55 ??m buried heterostructure (BH) distributed feedback (DFB) lasers are discussed and several degradation modes are clarified. DFB lasers essentially fail due to BH interface degradation in the same manner as BH Fabry-perot (FP) lasers. Additional degradation modes peculiar to DFB lasers are found to exist.
A general eigenmode analysis is applied to model typical index-guided phase-locked laser arrays. It is shown that in phase operation can be achieved if only a very narrow range or structura1 parameter is controlled. CSP arrays are found to exhibit efficient supermode discrimination.
This paper presents a novel hysteresis phenomenon induced in the latch-up I-V characteristic of CMOS structures by three dimensional effects producing strongly bias dependent non-uniformities in the current lateral distribution. This behavior has been experimentally reproduced in a lumped element circuit, and a suitable model is presented.
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