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The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO2 buffer has been demonstrated. Measurement of channel current IDS shows no saturation due to uniform ferroelectric field across gate channel. Modulation of...
To embedded ferroelectric random access memories in the 65-nm CMOS and beyond, three-dimensional structure and low-temperature formation have been developed.
Nonlinear dielectric response of (Ba0.60 Sr0.40)TiO3 epitaxial films on ≪100≫ and ≪110≫-oriented NdGaO3 substrates were investigated as a function of film thickness. The second, fourth and sixth order permittivities were determined at 10 GHz and at room temperature from which the so-called critical field for maximum tunability was computed using a thermodynamic formalism recently developed by the...
In the last two decades, the electrocaloric (EC) effect which is associated to the temperature (??) dependence of the macroscopic polarization P(E,??) under electric field E has been spasmodically studied in ferroelectric materials in order to find an alternative to the classical refrigeration devices using freon. Basically, large electrocaloric temperature variation ???? originates from electric...
Representing a new approach to ultrasound generation and detection, study on piezoelectric micromachined ultrasonic transducers (pMUTs) has been a growing research area in recent years. Intensive research work has been directed on the deposition of lead zirconate titanate (PZT) films on silicon substrates for their excellent piezoelectric coefficients and electromechanical coupling coefficients. However,...
Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature...
Flexural plate wave (FPW) device has great potential for biological sensor application due to 1) isolation of its electric circuit from the medium being investigated, 2) low acoustic energy loss in liquid medium, and 3) simpler oscillator circuit design. Since FPW device can be fabricated onto silicon-based substrates by micromachining technology, it offers batch processing for economic sensor fabrication...
The dielectric property varies significantly with the B-site cations in ABO3 perovskite-type oxides. In this study, we tried to understand the difference in the dielectric properties between SrTiO3 (STO, ??r = 290, Qf = 3,000 GHz) and SrZrO3 (SZO, ??r = 30, Qf = 13,700 GHz) by measuring dielectric spectroscopy of their solid solutions in a wide frequency range. The dielectric permittivity and the...
A PZT, Pb(Zr,Ti)O3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the concept of field-effect transistor with ferroelectric gate. The high temperature perocessing conditions for PZT were optimised in order to grow highly...
Sintered high density compacts from the BiFeQ3- PbTiO3 solid solution series were fabricated using conventional mixed-oxide techniques. The compacts were then prepared and examined using conventional X-ray diffraction. This surface measurement showed a large region of co-existence of two crystallographic phases, rhombohedral and tetragonal. Examination of the bulk material using transmission of synchrotron...
The feasibility of nonvolatile memory (NvRAM) structure with nondestructive readout (NDRO) capability based on Si-MOSFET integrated with a ferroelectric polyvinylidene fluoride trifluoroethylene copolymer (P(VDF-TrFE)) as a gate along with SiO2 buffer has been demonstrated. Measurement of channel current IDS shows no saturation due to uniform ferroelectric field across gate channel. Modulation of...
Bismuth ferrite lead titanate (BFPT) films of composition xBiFeO3 - (1-x)PbTiO3, with x from 0 to 1, have been deposited on platinised silicon substrates employing pulsed laser deposition under various temperatures and oxygen pressures. Dense, high quality films were deposited at 530degC with 150 mTorr oxygen pressure. The crystal structure and orientation of the films has been studied by powder x-ray...
Representing a new approach to ultrasound generation and detection, study on piezoelectric micromachined ultrasonic transducers (pMUTs) has been a growing research area in recent years. Intensive research work has been directed on the deposition of lead zirconate titanate (PZT) films on silicon substrates for their excellent piezoelectric coefficients and electromechanical coupling coefficients. However,...
Ferroelectric materials are intrinsically multifunctional and have found a broad range of applications. A new class of semicrystalline terpolymers comprising vinylidene fluoride (VDF), trifluoroefhylene (TrFE), and 1,1-chlorofluoroefhylene (CFE), were prepared at the Institut Franco-Allemand de Recherches in Saint-Louis (ISL) via a suspension polymerization process. Relevant studies and results show...
[Bi0.5(Nai1-x-yKxLiy)0.5]TiO3 (BNKLT) lead-free piezoelectric ceramics invented in authors' group were used for making of two kinds of middle frequency ceramic filters. The BNKLT ceramics was fabricated into the single disc for middle frequency filter with the center frequency being about 530 kHz by using the skeletal vibration mode. The loss insertion is about 3 dB, and the bandwidth is about 8.8...
Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature...
BiFeO3-PbTiO3-based materials have the potential to be used as high temperature piezoelectrics and are candidate multiferroic materials. Two drawbacks are the significant conductivity and the apparently low mobility of ferroelastic domain walls. Both may be influenced by aliovalent doping. Here we have investigated a number of B-site dopants, including manganese, plus B-site non-stoichiometry (i.e...
The dielectric property varies significantly with the B-site cations in ABO3 perovskite-type oxides. In this study, we tried to understand the difference in the dielectric properties between SrTiO3 (STO, epsivr= 290, Qf = 3,000 GHz) and SrZrO3 (SZO, epsivr= 30, Qf = 13,700 GHz) by measuring dielectric spectroscopy of their solid solutions in a wide frequency range. The dielectric permittivity and...
After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiOx/SiOx/Si substrates using liquid injection ALD. Zr(C11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to...
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