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By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO2-based resistive random access memory (RRAM) device (< 1 × 3 nm2). This technology exhibits potential for application in atomic-scale memories. The 1 × 3 nm2 RRAM device exhibited an excellent performance, featuring a...
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WOx material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test at high current density indicates >108 cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies...
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