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Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.
In this work, new approach to gain spectra tuning have been developed for quantum-cascade structures. The spectral tuning is based on the phase space filling effect evoked by optical driving signals inducing interband electron transitions and populating of conduction lasing subbands. For three-well THz GaAs/AlGaAs quantum-cascade structure, mathematical modeling show that gain spectra can be shifted...
Carrier transport in semiconductor quantum wells relevant for high-speed properties of QW lasers and SOAs is addressed. The emphasis is on tunneling in asymmetric MQWs. It is shown that tunneling is occurring on the time scale of intraband scattering or shorter.
The ridge-waveguide semiconductor laser and amplifier is simulated. Comparison of simulation results of static characteristics to experiment has shown good agreement. Simple physical picture of SOA recovery is developed and it shows that any alternation of the carrier lifetimes in the active region of SOA can be used for speed-up of device response. Various combinations of active region doping have...
Simulation of band structure, potential profile and carrier transport in QWs are highlighted. Anisotropy of the valence band on the density of states and gain spectra of QWs is addressed. It has been shown that axial approximation leads to underestimated gain. Errors can amount to 18.8%. Results of selfconsistent computation of energy band diagram for compositionally asymmetric multiple quantum-well...
We simulate compression of the chirped femtosecond laser pulse in the chirped mirror. The found results show an ability to achieve a 90% pulse compression under single reflection from the mirror. It has found that 39 number of TiO2/SiO2 layer pairs is optimal value for compression of the given femtosecond pulse.
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