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article

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 19 - 25

In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs) by using metal extensions (Hafnium) at the source and drain top and bottom edges. The metal hafnium induces charge plasma and hence realizes DSLs...

article

Experimental Investigations of State-of-the-Art 650-V Class Power MOSFETs for Cryogenic Power Conversion at 77K

Yu Chen, Xiao-Yuan Chen, Tao Li, Ying-Jun Feng, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 8 - 18

With consideration of both the operating properties from cryogenic MOSFETs and refrigerating costs from cryogenic refrigerators, this paper attempts to carry out the experimental tests and performance evaluations of state-of-the-art 650-V class MOSFETs, and thus to explore a possible design guideline for cryogenic power conversions at liquid nitrogen temperature. Three cryogenic operating behaviors...

article

UHD AMOLED Driving Scheme of Compensation Pixel and Gate Driver Circuits Achieving High-Speed Operation

Chih-Lung Lin, Po-Syun Chen, Ming-Yang Deng, Chia-En Wu, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 26 - 33

This paper presents a new driving scheme for active-matrix organic light-emitting diode displays. A pixel circuit based on this driving scheme was developed to compensate for the threshold voltage and mobility variations of low-temperature polycrystalline-silicon thin-film transistors (TFTs), eliminate image flickering and current-resistance voltage drops, and suit ultrahigh-definition (UHD) resolution...

article

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Cem Alper, Jose Luis Padilla, Pierpaolo Palestri, Adrian M. Ionescu

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 2 - 7

We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field-effect transistor (EHBTFET). If the device is designed to conduct only under certain conditions, e.g., when

$V_{\mathrm {n-gate}} = V_{\mathrm {DD}}$

and

$V_{\mathrm {p-gate}} = 0$

...

article

Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

Nicola D'Ascenzo, Werner Brockherde, Stefan Dreiner, Alexander Schwinger, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 74 - 80

The possibility to design a silicon photomultiplier (SiPM) using standard CMOS processes represents the frontier of current low photon flux detectors. It allows an integrated development of both sensor and intelligent read-out electronics on the same technology line and enables to create intelligent devices with on-chip signal processing. We report the design and characterization of an SiPM composed...

article

Electrical Contacts in SOI MEMS Using Aerosol Jet Printing

Behnam Khorramdel, Altti Torkkeli, Matti Mantysalo

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 34 - 40

In this paper, an additive method to make electrical contacts in SOI MEMS devices with aerosol jet printing is introduced. Small grooves were etched to the frame of MEMS accelerometer in the same step with the active structure release. Aluminum ink was jetted to the trenches in wafer-level to bridge the device layer to the handle wafer with the minimum amount of material. After subsequent annealing,...

article

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO_x

Jiuren Zhou, Yue Peng, Genquan Han, Qinglong Li, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 41 - 48

We experimentally demonstrate that hysteresis of negative capacitance (NC) Ge pFETs is reduced through modulating the ferroelectric properties in HfZrO_x (HZO) by changing the post annealing temperature. As annealing temperature varies from 350 °C to 450 °C, HZO exhibits a significant increasing in the ratio of remnant polarization

$P_{r}$

to coercive field

$E_{c}$

, which results in the improvement...

article

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Farzan Jazaeri, Chun-Min Zhang, Alessandro Pezzotta, Christian Enz

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 85 - 94

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations of both oxide and Si/oxide interface trapping. This charge-based approach represents an essential step toward compact modeling of ionizing dose and...

article

Al₂O₃-Dielectric In_0.18Al_0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Yu-Chang Chen

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 68 - 73

This paper investigates novel Al₂O₃-dielectric In_0.18Al_0.82N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-

$\mu \text{m}$

deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation...

article

Quadruple Gate-Embedded T Structured GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Ching-Ting Lee, Wei-Shian Chen, Hsin-Ying Lee

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 63 - 67

In this paper, high performance quadruple gate-embedded T structured GaN-based metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were fabricated using laser interference photolithography method and photoelectrochemical oxidation method, in which polymethylmethacrylate was used as sacrificial layer. The associated drain-source saturation current was improved to 175 mA/mm and the...

article

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafria

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 55 - 62

Power consumption and I_on/I_off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (

$V_{\mathrm{ OP}}$

) has been proposed, which provides...

article

Si₃N₄/Al₂O₃ Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 49 - 54

This paper introduces a novel surface passivation using Si₃N₄ (20-nm)/Al₂O₃ (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances in InP-based HEMTs. Notably different from the conventional Si₃N₄ approach, an ultrathin layer of Al₂O₃ (15-nm) grown by atomic layer deposition is incorporated in the surface...

article

75 Years of the Device Research Conference—A History Worth Repeating

Aaron D. Franklin, Debdeep Jena, Deji Akinwande

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 116 - 120

At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DRC). The DRC has been the launching pad for many game-changing innovations, from early transistors to new electronic materials. While the conference has...

article

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Huan-Chung Wang, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 110 - 115

We demonstrate the electrical performances of AlGaN/GaN metal–insulator–semiconductorhigh electron mobility transistors (MIS-HEMTs) with high quality Al₂O₃ gate dielectric deposited by plasma enhanced atomic layer deposition using both H₂O and remote O₂ plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al₂O₃ film quality were obtained, resulting in a very small threshold voltage...

article

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 81 - 84

The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric. High program/erase speed as well as large shift of the threshold voltage were obtained. Charges injection was improved according to the constant current stress measurement...

article

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Yuangang Wang, Yuanjie Lv, Xingye Zhou, Jiayun Yin, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 106 - 109

In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double gates. A threshold voltage of 0.23 V and a high drain current density of 851 mA/mm are obtained in GSG HFET. Compared with the proposed depletion-mode...

article

Gold-Nanoparticle-Coated Ge MIS Photodiodes

Hao-Tse Hsiao, I-Cheng Yao, I-Chih Ni, Shien-Der Tzeng, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 95 - 99

Ge photodiodes with ultra-high responsivities have been demonstrated with gold nanoparticle assistance. The responsivity can reach a value of 37.7 A/W, which corresponds to a gain of 76. Such a high responsivity originates from the amassment of photo-generated holes in Ge under the boundary of gold nanoparticles, which reduces the barrier for electron tunneling from metal to the hole-amassment Ge...

article

In–Ga–Zn–O Thin-Film Devices As Synapse Elements in a Neural Network

Mutsumi Kimura, Yuki Koga, Hiroki Nakanishi, Tokiyoshi Matsuda, more

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 100 - 105

We have succeeded in utilizing In–Ga–Zn–O (IGZO) thin-film devices as synapse elements in a neural network. The electrical conductance is regarded as the connection strength, and the continuous change by flowing electrical current is employed as the connection plasticity based on the modified Hebbian learning as a learning rule. We developed a cellular neural network using the IGZO thin-film devices...

article

High-Power Single-Frequency Source in the Mid-Infrared Using a Singly Resonant Optical Parametric Oscillator Pumped by Yb-Fiber Laser

Mukesh Kumar Shukla, Ritwick Das

IEEE Journal of Selected Topics in Quantum Electronics > 2018 > 24 > 5 > 1 - 6

We present a high-power single-frequency continuously tunable mid-infrared (MIR) singly resonant optical parametric oscillator (SRO) using

$\text{80-mm}$

-long MgO-doped PPLN (MgO:PPLN) crystal pumped by a continuous-wave Yb-fiber laser. The SRO having four-mirror ring-cavity configuration is tunable in the MIR band of

$\text{3761--3970 nm}$

yielding a maximum power of

$\text{2W}$

$\text{3895 nm}$

...

article

High Repetition Rate All-Solid-State Pulsed 2 μm Laser Based on Selenide Molybdenum Saturable Absorber

Xinyang Liu, Kejian Yang, Shengzhi Zhao, Ming Li, more

IEEE Journal of Selected Topics in Quantum Electronics > 2018 > 24 > 5 > 1 - 6

A kind of saturable absorber (SA) based on layered MoSe₂ nanosheets has been fabricated successfully by an ultrasound-assisted liquid phase exfoliation method. The as-prepared MoSe₂ SA was characterized and employed as Q-switch in a diode-pumped Tm-doped crystalline all-solid-state laser at around 2 μm. A stable passively Q-switched 2 μm laser with a maximum pulse repetition rate of 158 kHz and a...

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Search results

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

Experimental Investigations of State-of-the-Art 650-V Class Power MOSFETs for Cryogenic Power Conversion at 77K

UHD AMOLED Driving Scheme of Compensation Pixel and Gate Driver Circuits Achieving High-Speed Operation

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

Electrical Contacts in SOI MEMS Using Aerosol Jet Printing

Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO_x

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Al₂O₃-Dielectric In_0.18Al_0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

Quadruple Gate-Embedded T Structured GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Si₃N₄/Al₂O₃ Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances

75 Years of the Device Research Conference—A History Worth Repeating

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al₂O₃ Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Gold-Nanoparticle-Coated Ge MIS Photodiodes

In–Ga–Zn–O Thin-Film Devices As Synapse Elements in a Neural Network

High-Power Single-Frequency Source in the Mid-Infrared Using a Singly Resonant Optical Parametric Oscillator Pumped by Yb-Fiber Laser

High Repetition Rate All-Solid-State Pulsed 2 μm Laser Based on Selenide Molybdenum Saturable Absorber

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