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Memristors are considered a promising emerging device that may improve some specific applications, like memories, or make feasible new ones, mainly alternative computing architectures. However, it is not a mature technology and their characteristics can vary significantly depending on their structures. Also, variability and reliability might suppose an important issue in some applications. In this...
Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate...
Due to the promotion of the globalization of environmental protection process, some high reliability requirements of electronic products have to be passive to the backward compatible soldering process. Compared to the traditional Sn-Pb soldering process, the backward compatible soldering process has to face with a smaller process window and a higher process implementation difficulty. In this paper,...
We have proposed two algorithms to demonstrate the relationship between W oxidation time and switching speed in this paper. The demonstration is carried out on a 128Kb test macro of AlOx/WOx bi-layer RRAM which was fabricated with 0.18µm standard logic process. Increasing the W oxidation time properly could achieve a faster switching speed while the overmuch oxidation time will result in performance...
Fe-Ni film with compositions of 45wt.% Ni, which is also denoted as Fe-45Ni, was used as under bump metallization (UBM) to evaluate the interfacial reliability of SnAgCu/Fe-Ni solder joint under electromigration (EM) test. For comparison, commercial Cu UBM was also adopted in the reliability test. The microstructural evolutions of these two UBM solder joints were observed by scanning electron microscope...
As the miniaturization of the devices is progressing the chips have to have more functions and cover less space. One of the methods to achieve this goal is usage of Package-on-Package (PoP) technique. In this paper the influence of used soldering profiles on joints reliability will be presented. The boards had ENIG as final coating. The reliability was checked by the monitoring of resistance as the...
In this paper, the physical mechanism and models of oxide-based resistive-switching random access memory (RRAM) and the optimization of the devices and arrays are addressed and reviewed. The review focuses on our research achievements on the unified physical mechanism, physical-based models including switching and reliability behaviors, and the optimization design issues of the oxide-based RRAM.
In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (∼ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage...
Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current...
In this article the questions of increase of reliability and durability, high-power pulsed microwave devices M-type. Analysis of the work metal-alloy cathode in the device showed its lack of resistance to a pulsed thermal loads caused by back electron bombardment. The developed design of metal-ceramic cathode unit with water cooling, able to withstand a pulse thermal load and divert from the cathode...
The continuous downward scaling in integrated circuit (IC) technologies has led to rapid shrinking of transistor and interconnect feature sizes. Scaling causes reduction in interconnect linewidth, which leads to surge in resistance due to increased contributions from grain boundary and surface scattering of electrons in the metal lines. Further, current density inside interconnects is also enhanced...
Low solids flux/paste (Users like to refer as “no-cleaning”) had been widely used driven by pressure of cost reduction, environmental protection and worker safety. The advent of low solids flux/paste put electronics manufactures into a common misconception that cleaning had become a concern of the past and cleaning process could be removed. In fact, no-cleaning approach is often not a viable option...
Spin-transfer torque random access memory (STT-RAM) has emerged as a promising nonvolatile memory technology for its fast speed, small footprint and zero standby power. However, the unique and unusual high asymmetric error rates at different memory bit operations, which are proved to be far beyond the efficiency of common error correction codes (ECCs), greatly hinder its applications. In this work,...
Silicon Carbide (SiC) is a leading wide bandgap semiconductor for increasing the power density of bigb power applications. This paper overviews the long term reliability and safe operating area of15 kV SiC PiN diodes during pulsed current conditions. An automated system is used to stress these devices with ultra-high current pulses and monitor degradation with in-system characterization. The system...
Phase change memory (PCM) has emerged as a promising non-volatile memory technology. Multi-level cell (MLC) PCM, while effectively reducing per bit fabrication cost, suffers from resistance drift based soft errors. It is challenging to construct reliable MLC chips that achieve high performance, high storage density, and low energy consumption simultaneously. In this paper, we propose ReadDuo, a fast...
Low-voltage induction motor is one of the most widely used types of electrical machines. Today more and more end users demand reliable and energy efficient electrical machines as an extra feature. Design and applying of control systems for improving energy efficiency must be in correlation with reliability requirements; it is necessary to fetch out the changing operation conditions that can lead to...
Electronic systems are exposed to stress conditions during their life cycle. Chemical substances such as moisture and acid are the major source of stresses. The chemical stress condition can induce chemical degradation of electronic components and interconnects including solder joints. Chemical degradation often leads to malfunctions of electronic systems, ultimately resulting in system failure. To...
An enhanced redistribution layer architecture has been developed in which the Cu wires are directly covered with a double layer consisting of two types of dielectrics by using a semi-additive process. The double layer enhanced the thermal and electrical reliabilities of the Cu wires. Moreover, it enabled fabrication of a single-sided nine-level redistribution layer embedded with a fully stacked via...
Bonds made with Pd coated pure Ag wires were studied in this work with respect to their electrical resistance under high temperature storage at 200 °C. The Pd coated 18 micron diameter Ag wires were ball bonded to the Al metallization on testchips attached to ceramic substrates. All free-air balls were made in air as Pd coated Ag wire does not need protective atmosphere such as forming gas or nitrogen...
A powerful integrated fan-out (InFO) wafer level system integration (WLSI) technology has been developed to integrate application processor chip with memory package for smart mobile devices. This novel InFO technology is the first high performance Fan-Out Wafer Level Package (FO_WLP) with multi-layer high density interconnects proposed to the industry. In this paper we present the detailed comparison...
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